In this paper, we studied the physical and electrical characteristics of $ extrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$Omega$/$square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$ extrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$mu$$Omega$-$ extrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.