In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. Also the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/$ extrm{cm}^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/$ extrm{cm}^2$, respectively.