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Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing
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  • Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing
  • Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing
저자명
Cheon. Chae-Il,Lee. Bong-Yeon,Kim. Jeong-Seog,Bang. Kyu-Seok,Kim. Jun-Chul,Lee. Hyeung-Gyu
간행물명
Transactions on electrical and electronic materials
권/호정보
2003년|4권 2호|pp.20-23 (4 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $mu extrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${mu}$C/$ extrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.