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Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters
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  • Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters
  • Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters
저자명
Lee. Sung-Gap,Lee. Sang-Heon
간행물명
Transactions on electrical and electronic materials
권/호정보
2003년|4권 2호|pp.24-28 (5 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$mu extrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$mu extrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184% and 15.62%, respectively.