Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{circ}C$ was 56$mu$C/$ extrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$ imes$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.s.s.