The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{circ}C$ were as follows : Q$ imes$ $f_{o}$ = 50,800 GHz, $varepsilon$$_{r}$ = 22, and $ au$$_{f}$ = -53 ppm/$^{circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{circ}C$, at which we could obtain following results: Q$ imes$ $f_{o}$ = 32,800 GHz, $varepsilon$$_{r}$ = 26, and$ au$$_{f}$ = 0 ppm/$^{circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.