The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000AA$/$1200AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000AA$/X$SiOAA$, and $2000AA$$1800AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.