- 전해도금에 의해 형성된 반도체 금속도금용 주석-납 합금피막의 첨가제 및 전해조건의 영향
- ㆍ 저자명
- 정강효,김병관,박상언,김만,장도연
- ㆍ 간행물명
- 한국표면공학회지
- ㆍ 권/호정보
- 2003년|36권 1호|pp.34-41 (8 pages)
- ㆍ 발행정보
- 한국표면공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Effects of additives and plating conditions of high speed electroplating were investigated. The Sn content in electrodeposit was highly decreased with increasing current density from $10A/dm^2$ to $50A/dm^2$, and the current efficiency on the cathode was decreased. The carbon content in the electrodeposit was decreased with increasing current density from $10A/dm^2$ to $30A/dm^2$, however the carbon content was highly increased in the range of $40A/dm^2$$∼50A/dm^2$. The formation of tetravalent tin and stannic oxide sludge was prevented by the addition of gallic acid in the bath. The changing of Sn content in the electrodeposit is caused by the addition of gallic acid.