- 수정된 TFA-MOD법에 의한 $(100) SrTiO_3$ 단결정 기판 위 고 임계전류 밀도 $YBa_2Cu_3O_{7-$delta$}$</TEX> 박막 제조
- ㆍ 저자명
- 위성훈,신거명,송규정,홍계원,문승현,박찬,유상임
- ㆍ 간행물명
- 한국초전도·저온공학회논문지
- ㆍ 권/호정보
- 2004년|6권 1호|pp.12-17 (6 pages)
- ㆍ 발행정보
- 한국초전도저온공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
High critical current density. $J_c over 1 MA/cm^2$at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) SrTiO$_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at 700-7$25^{circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and P($H_2O$)=4.2%, most probably due to an insufficient reaction time, and hence T$_{c}$ was greatly degraded. However the films fired at 750-80$0^{circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to 80$0^{circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c value of 1.1 MA/cm^2$ was obtained from the YBCO film fired at 80$0^{circ}C$.>.