In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $Omega$-cm, and thickness $100mu extrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{ imes}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.