Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{circ}C$. while the c-axis growth became dominant above 83$0^{circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.