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Glass 첨가량에 따른 ZnO 바리스터의 전기적 특성
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  • Glass 첨가량에 따른 ZnO 바리스터의 전기적 특성
저자명
조현무,이종덕,박상만,이성갑,Cho. Hyun-Moo,Lee. Jong-Deok,Park. Sang-Man,Lee. Sung-Gap
간행물명
전기전자재료학회논문지
권/호정보
2005년|18권 9호|pp.815-820 (6 pages)
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한국전기전자재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

ZnO varistor ceramics were fabricated with variation of addition of glass-frit amount and the sintering temperature was $1100^{circ}C$. The average grain sizes were showed increased from $8.6{mu}m;to;10{mu}m$, and varistor voltages were decreased from 506V to 460V by added amount of glass-frit. Nonlinear coefficient $alpha$, of all were with increasing the amount of glass-frit more than 70, in case of added on $0.03wt\%$ glass-frit was 83. And leakage current were less than $1{mu}A$ with applied at $82\%$ of varistor voltage. The clamping voltage ratio of the specimens added $0.03wt\%$ glass-frit was 1.41 at applied 25A $[8/20;{mu}s]$. In the specimen added $0.03wt\%$ glass-frit, endurance of surge current and deviation of varistor voltage were $6200A/cm^2,;Delta-1.67\%$, respectively and clamping voltage ratio was 2.33. In the Specimen added $0.03wt\%$ glass-frit were superior to any other compositions on High Temperature Load Test(HTLT) for 1000 hr at $85^{circ}C$, and deviation of the varistor voltage were $Delta-1.29\%$.