The growth properties of MOD-YBCO films were investigated. To enhance the growth rate of YBCO layer and inhibit the build-up of HF gas during the annealing process in TFA-MOD for YBCO coated conductors the method of low pressure annealing was employed. Total pressure was changed from 700Torr to 1Torr and its effect on growth of YBCO films was compared with atmospheric one. The lower Pressure was effective to control of the pore size in MOD method . Surface morphology of YBCO films processed at low total pres sure was rough and composed of random YBCO (103) grains. But large pores, usually observed at atmospheric process in MOD disappeared and also the number of pores was reduced at low pressure annealing. Also discussed ate the effects of Fluorine-free Y and Cu precursor solution on the development of microstructure. Dense surface me phology and with less and small pores can be provided through controlling Fluorine content.