In the manufacturing processes of semiconductor, test process is important for quality of products. In the manufacturing process of dynamic memory, memory test is more important. So, automatic test equipment(ATE) is used necessarily. But, according to increase of speed of dynamic memory operation, the rapid test equipment is needed. Impedance matching between ATE and dynamic memory is expected to be an important problem for making a rapid test equipment over 1Gbps. According to increase of speed, inner impedance of ATE also works on important parameter for test. This paper is about the method that is for impedance matching of inner impedance and coaxial cable occurring in manufacturing of ATE. We proved effects of inner impedance by electric theory and verified the method of impedance matching using computer simulation.