We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},;N_{2};and;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{pm}5^{circ}C;and;810{pm}5^{circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{sim}60nm$ with the length of several ${mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01;mA/cm^{2}$ are $10;V/{mu}m;and;8.5;V/{mu}m$ for the wires grown at $700{pm}5^{circ}C;and;810{pm}5^{circ}C$, respectively.