The dependence of substrate on the Ag photodoping phenomenon into amonhous $({alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(eta)$ in real time. The films (Ag and ${alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${alpha}$-SeGe_{strate) and type II (${alpha}$<}-SeGe/Ag_{strate). The $eta$<} kinetics comprised to be three steps in which $eta$ initially increases, is saturated to be maximized $(eta_M)$, and then decreases relatively gradually. For the same substrate, the $eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.