Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{circ}C$ was about $4.6{ imes}10^{10}/cm^2;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{circ}C$ for a ${pm}1;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.