A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.