황화주석 박막을 만들기 위해 마그네트론 스퍼터 박막증착 공정을 통해 몰리브텐 유리판위에 주석박막을 만들고, 95% 알곤 +5% 황화수소 가스 혼합물을 사용하여 아닐링 공정을 통해 황화주석 박막을 형성하위에 증착하는것이 좋은 결과를 보여주고있다. 박막면의 화학적 물리적 특성을 전자현미경, X선 분석, X 선회절을 통해 실험하였으며, 아닐링 조건에 따른황화주석 박막의 파장대 반사율의 관계를 측정하였다.
Thin films of tin sulphide (SnS) have been formed by a novel 2-stage process where-in D.C. magnetron sputtering was used to deposit to thin films of tin (Sn) and the layers then sulphidised using 5% hydrogen sulphide ($H_2S$) gas in Argon. Although it was not found possible to deposit high quality thin films of tin directly onto glass substrates, excellent layers of tin were produced by using molybdenum (Mo) coated glass as the substrate material. The chemical and physical properties of the SnS layers formed were determined using scanning electron microscopy, energy dispersive x-ray analysis, x-ray diffraction studies and using reflectance versus wavelength measurements and these related to the conditions of synthesis. The data shows that it should be possible to produce conventional "substrate structure" devices based on the use of this technology.
