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Thin Film Passivation Characteristics in OLED Using In-situ Passivation
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  • Thin Film Passivation Characteristics in OLED Using In-situ Passivation
  • Thin Film Passivation Characteristics in OLED Using In-situ Passivation
저자명
Kim. Kwan-Do,Shin. Hoon-Kyu,Chang. Sang-Mok
간행물명
Transactions on electrical and electronic materials
권/호정보
2012년|13권 2호|pp.93-97 (5 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this study, the fabrication and the characteristic analyses of OLED using in-situ passivation are investigated. OLEDs represent a disadvantage in decreasing its life due to the degradation caused by the penetration of moisture and oxygen. After the fabrication of OLED, an in-situ passivation method for inorganic thin films is developed. A process that uses PECVD method which can apply a vapor deposition process at room temperature is also developed. Changes in the degradation and electric characteristics of OLEDs are also analyzed by applying $SiO_2$ and SiNx thin films to OLED as a passivation layer. By applying the fabricated thin film to OLEDs as a passivation layer, the moisture penetration in a single layer film is ensured below $1{ imes}10^{-2};g/m^2.day$. This leads to the improvement of such degradation characteristics in the application of multilayer films.