In this paper, we investigate the effect of groove geometry on chemical mechanical polishing (CMP) characteristics by considering the slurry duration time (SDT) and frictional behavior during CMP. XY-grooved polishing pads with different kinds of groove geometry (groove width and pitch) are considered. The dynamic coefficient of friction (COF) was measured with a piezoelectric sensor. The study revealed that the groove geometry affects the slurry flow in the wafer-pad interface and the motion of slurry abrasives, which influences the friction force, SDT, material removal rate (MRR), and within-wafer nonuniformity (WIWNU). A polishing pad having a wider groove with a small pitch has a shorter SDT and a higher COF, which guarantee better a polishing uniformity and MRR.