It is described that the proton beam induces micro-size defects and electronic deep levels in luminescence Thin Film. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) and Positron lifetime Spectroscopy were applied to study of characteristics of a poly crystal samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S-parameter value. The samples were exposed by 3.0 MeV proton beams with the intensities ranging between 0 to ${sim}10^{14}$ particles. The S-parameter values decreased as increased the proton beam, that indicates the protons trapped in vacancies. Lifetime ${ au}_1$ shows that positrons are trapped in mono vacancies. Lifetime ${ au}_2$ is not changed according to proton irradiation that indicate the cluster vacancies of the grain structure.