In this study, we deposited and investigated ${mu}c$-Si:H thin films prepared by Plasma Enhanced Chemical Vapor Deposition(PECVD) system. To deposition silicon thin films, we controlled $SiH_4$ gas concentration, RF input power, and heater temperature. According to the experiments, the more $SiH_4$ gas concentration increased, deposition rate also increased but crystalline property decreased at the same conditions. In the RF input power case, deposition rate and crystalline property increased together when the input power increased from 100[W] to 300[W]. If RF input power was 300[W], deposition rate has reached saturation point. In the heater temperature, deposition rate increased when heater temperature increased. Crystalline property maintained a certain level until heater temperature was $250[^{circ}C]$. And then it was a suddenly increased. Multistep method has been proposed to improve the quality of ${mu}c$-Si:H thin film. $SiH_4$ gas was injected with a time interval. According to the experiments, crystallite ratio improve about 20~60[%] and photo conductivity increased up to six times.