We have studied photovoltaic characteristics of single-junction GaAs solar cells with/without an $MgF_2/ZnS$ anti-reflective coating (ARC) illuminated by low-density concentration (<10 suns). By the ARC deposition, the short-circuit current density ($J_{SC}$) and the fill factor (FF) are increased by $5mA/cm^2$ and 5% at a standard illumination (1 sun), respectively, and the resulted conversion efficiency is enhanced by 45%. In contrast with the cell with no ARC showing a rapid degradation with increasing concentration power, the efficiency of ARC-deposited cell remains almost constant as ($17.7{pm}0.3$)% regardless of the concentration. It informs that ARC treatment is very effective in GaAs concentrator solar cells.