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Synthesis of N-doped Ethylcyclohexane Plasma Polymer Thin Films with Controlled Ammonia Flow Rate by PECVD Method
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  • Synthesis of N-doped Ethylcyclohexane Plasma Polymer Thin Films with Controlled Ammonia Flow Rate by PECVD Method
  • Synthesis of N-doped Ethylcyclohexane Plasma Polymer Thin Films with Controlled Ammonia Flow Rate by PECVD Method
저자명
Seo. Hyunjin,Cho. Sang-Jin,Boo. Jin-Hyo
간행물명
Applied science and convergence technology
권/호정보
2014년|23권 1호|pp.44-47 (4 pages)
발행정보
한국진공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.