The analytical model for the induced Hall field in the magnetotransistor considering the diffusion of carriers has been proposed and verified by experiment and simulation. Previous models for the induced Hall field in the magnetotransistor do not consider the influence of the diffusion carrier transport. However, the carrier diffusion in the base region of magnetotransistors cannot be neglected and should be considered to evaluated the Hall field in the magnetotransistors accurately. We have measured the Hall voltage in the base region of the fabricated magnetotransistors. The measured values have been compared with the numerical results evaluated from our diffusion model as well as the calculated results from the conventional model. The evaluated Hall voltage from the diffusion model agrees well with the measured values while the sign of the Hall voltage calculated by the conventional model is opposite to that of the measured values in the saturation region. This discrepancy is due to the fact that the diffusion model considers the carrier diffusion while the conventional one does not. The Hall field model including the influence of carrier diffusion may be an important tool to optimize the device structure and to understand the operating principle of the magnetotransistor.