Microwave heating is a promising method to improve procedure for synthesis of silicon carbide powder under fast microwave induced heating. In this study β-SiC powder was synthesized by microwave heating using high purity Si and Graphite in a 2,45GHz microwave field in nitrogen atmosphere. The conditions for synthesis have been performed C/Si mole ratio 2.0, 1.2 at 1350, 1400, 1450℃ for 60, 10, 15min to get β-SiC powder. The properties of the powder were determined by means of X-ray diffraction, scanning electron microscope, surface area. According to result, β-SiC powder can be achieved at 1350-1450℃ in at least 10min of microwave exposure.