Titanium nitride (TiN) films were prepared by reactive sputter deposition in mixed gas of Ar+$N_2$. The volume percentage of $N_2$ in the working gas was chosen so as to grow stoichiometric TiN films and the substrate temperature during film growth was set from room temperature to $700^{circ}C$. Stoichiometric $Ti_{0.5}N){0.5}$ films with (111) texture were grown at temperatures over $600^{circ}C$, while films prepared at temperatures below $600^{circ}C$ showed N-rich TiN. The composition X and y in the $Ti_xN_y$ films determined by XPS and RBS varied within 5% with the substrate temperature. The sheet resistance of the TiN films decreases as the substrate temperature increased. TiN film prepared at $600^{circ}C$ showed 14.5$OmegaBox$, and it decreased to 8.9$OmegaBox$ after the sample was annealed at $700^{circ}C$, 30 sec in Ar-gas ambient by RTA. By far, high quality stoichiometric TiN films by reactive sputtering in the mixed gas ambient could be prepared at substrate temperature over $600^{circ}C$.