Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${AA}$ and 160${AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{circ}C$ and 260$^{circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${AA}$ Cu seeded substrate was lower then that of 40 ${AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.