The LPCVD system of batch type for the massproduction of semiconductor fabrication has a problem of phosphorous concentration uniformity in the boat. In this paper we study an improvement of the uniformity for phosphorous concentration and sheet resistance. These property was improved by using the nitrogen process and modified long nozzle for gas injection tube in the doped polysilicon deposition system. The phosphorous concentration and its uniformity for polysilicon film are measured by XRF(X-ray Fluorescence) for the conventional process condition and nitrogen process. In conventional process condition, the phosphorous concentration, it uniformity and sheet resistance for polysilicon film are in the range of 3.8~5.4$ imes$10ulcorner atoms/㎤, 17.3% and 59~$Omega$/ , respectively. For the case of nitrogen process the corresponding measurements exhibited between 4.3~5.3$ imes$10ulcorner atoms/㎤, 10.6% and 58~81$Omega$/ . We find that in the nitrogen process the uniformity of phosphorous concentration improved compared with conventional process condition, however, the sheet resistance in the up zone of the boat increased about 12 $Omega$/ . In modified long nozzle, the phosphorous concentration, its uniformity and sheet resistance for polysilicon films are in the range of 4.5~5.1$ imes$10ulcorner atoms/㎤, 5.3% and 60~65$Omega$/ respectively. Annealing after $N_2$process gives the increment of grain size and the decrement of roughness. Modification of nozzle gives the increment of injection amount of PH$_3$. Both of these suggestion result in the stable phosphorous concentration and sheet resistance. The results obtained in this study are also applicable to process control of batch type system for memory device fabrication.