- 급속응고법을 이용한 Bi 계 고온초전도체 전류도입선 제조
- ㆍ 저자명
- 박용민,한진만,류운선,류운선
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2000년|13권 3호|pp.254-258 (5 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.