Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator system. In order to find the find the optimum growth condition, initially two different types of gas mixtures such as C$_2$H$_2$-NH$_3$ and C$_2$H$_2$-NH$_3$-Ar were systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{circ}C$ under 0.4 torr. The diameter of the grown CNTs was 40∼200nm. The diameter of the CNTs increases with increasing the Ni particles size. TEM images clearly demonstrated synthesized nanotubes to be multiwalled.