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나노인덴터와 KOH 습식 식각 기술을 병용한 Si(100) 표면의 마스크리스 패턴 제작 기술
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  • 나노인덴터와 KOH 습식 식각 기술을 병용한 Si(100) 표면의 마스크리스 패턴 제작 기술
저자명
윤성원,신용래,강충길
간행물명
소성가공
권/호정보
2003년|12권 7호|pp.640-646 (7 pages)
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한국소성가공학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).